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SI32171-B-FM

ProSLIC® Single-Chip FXS Solution with FXO Option

Silicon Laboratories 

Si3217x and Si3291x

ProSLIC® Single-Chip FXS Solution with FXO Option

Selected Electrical Specifications

Parameter

Ambient Temperature

Supply Voltage, Si3217x

Battery Voltage, Si3217x

Maximum Loop Resistance 

(loop + load)

DC Differential Output 

Resistance

Idle Channel Noise

PSRR from VDD

Longitudinal to Metallic/PCM 

Balance (forward or reverse)

Metallic/PCM to Longitudinal Balance

Longitudinal Impedance

Symbol

TA

VDD

VBAT

RLOOP

RDO

Longitudinal Current per Pin

DC Feed Current

See Table 5,

Si3217x

Data Sheet

2-Wire Return Loss

Transhybrid Balance

Thermal Resistance (QFN-42)

θJA

Thermal Resistance (SOIC-16)

θJA

Continuous Power Dissipation (QFN-42)

PD

Continuous Power Dissipation (SOIC-16)

PD

Test Condition

F-Grade

G-Grade

ILOOP=18 mA, VBAT = –48 V

ILOOP < ILIM

C-Message weighted

RX and TX, dc to 3.4 kHz

200 Hz to 1 kHz

1 kHz to 3.4 kHz

200 Hz to 3.4 kHz

200 Hz to 3.4 kHz at

TIP or RING

Active off-hook

200 Hz to 3.4 kHz

VTR = 0 V

200 Hz to 3.4 kHz

300 Hz to 3.4 kHz

TA = 85 °C

TA = 85 °C

Package Information

42-Pin QFN

16-Pin SOIC

Min Typical

Max

Unit

0

25

70

°C

–40

25

85

°C

3.13

3.3

3.47

V

–15

—

–136/–110

V

—

—

2000



160

—

—

8

—

55

58

60

53

58

40

—

—

50

640



12

dBrnC

—

dB

—

dB

—

dB

—

dB

—



—

25

—

mA

—

—

26

30

26

30

—

32

—

85

—

1.3

—

0.47

45

mA

—

dB

—

dB

—

°C/W

—

°C/W

—

W

—

W

MM

M in

Typ

Max

A

0.60

0.65

0.70

b

0.20

0.25

0.30

D

5.00 BSC

D2

3.35

3.40

3.45

e

0.50 BSC

E

7.00 BSC

E2

5.35

5.40

5.45

E3

1.65

1.70

1.75

E4

3.15

3.20

3.25

L

0.35

0.40

0.45

L1

0.05

0.10

0.15

Min

Max

A

—

1.75

A1

0.10

0.25

A2

1.25

—

b

0.31

0.51

c

0.17

0.25

D

9.90 BSC

E

6.00 BSC

E1

3.90 BSC

e

1.27 BSC

L

0.40

1.27

L2

0.25 BSC

h

0.25

0.50

ø

0°

8°

ProSLIC

Copyright © 2009 by Silicon Laboratories

4.14.09

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Other products or brandnames mentioned herein are trademarks or registered trademarks of their respective holders

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