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SA58637BS,118 Datasheet PDF : 22 Pages
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NXP Semiconductors
SA58637
2 × 2.2 W BTL audio ampliï¬er
14.2 BTL dynamic characterization
The total harmonic distortion-plus-noise (THD+N) as a function of frequency (Figure 8)
was measured with a low-pass ï¬lter of 80 kHz. The value of capacitor C3 influences the
behavior of PSRR at low frequencies; increasing the value of C3 increases the
performance of PSRR.
10
THD+N
(%)
1
10−1
002aac083
(1)
(2)
10−2
10
102
103
Po = 0.5 W; Gv = 20 dB.
(1) VCC = 6 V; RL = 8 Ω.
(2) VCC = 7.5 V; RL = 16 Ω.
104
105
f (Hz)
Fig 8. Total harmonic distortion-plus-noise as a
function of frequency
−20
PSRR
(dB)
−40
−60
αcs
(dB)
−70
−80
−90
002aac084
(1)
(2)
(3)
−100
10
102
103
104
105
f (Hz)
VCC = 6 V; VO = 2 V; RL = 8 Ω.
(1) Gv = 30 dB.
(2) Gv = 20 dB.
(3) Gv = 6 dB.
Fig 9. Channel separation as a function of frequency
002aac085
(1)
(2)
−60
(3)
−80
10
102
103
104
105
f (Hz)
VCC = 6 V; RS = 0 Ω; Vripple = 100 mV.
(1) Gv = 30 dB.
(2) Gv = 20 dB.
(3) Gv = 6 dB.
Fig 10. Power supply rejection ratio as a function of frequency
SA58637_1
Product data sheet
Rev. 01 — 25 February 2008
© NXP B.V. 2008. All rights reserved.
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