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Número de pieza
componentes Descripción
2SK3566 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
2SK3566
Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)
Hitachi -> Renesas Electronics
2SK3566 Datasheet PDF : 6 Pages
1
2
3
4
5
6
R
DS (ON)
– Tc
20
COMMON SOURCE
PULSE TEST
16
12
8
VGS
=
10 V
4
ID
=
1.5A
0.8
0
−
80
−
40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
2SK3566
I
DR
– V
DS
10
COMMON SOURCE
5
Tc
=
25°C
PULSE TEST
3
1
0.5
0.3
1
10
VGS
=
0V
0.1
3
0
−
0.4
−
0.8
−
1.2
−
1.6
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE – V
DS
1000
Ciss
100
Coss
10
COMMON SOURCE
VGS
=
0 V
f
=
1 MHz
Tc
=
25°C
1
0.1
1
Crss
10
100
DRAIN-SOURCE VOLTAGE V
DS
(V)
V
th
– Tc
5
4
3
2
COMMON SOURCE
1
VDS
=
10 V
ID
=
1 mA
PULSE TEST
0
−
80
−
40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
P
D
– Tc
50
40
30
20
10
0
0
40
80
120
160
200
CASE TEMPERATURE Tc (°C)
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
500
20
400
16
VDS
200
300
VDD
=
100 V
12
VGS
200
100
0
0
8
400 COMMON SOURCE
ID
=
2.5 A
4
Tc
=
25°C
PULSE TEST
0
5
10
15
20
TOTAL GATE CHARGE Q
g
(nC)
4
2005-01-24
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