2SK2059(L), 2SK2059(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Drain to source breakdown
V(BR)DSS
600
—
voltage
Gate to source breakdown
voltage
V(BR)GSS
±30
—
Gate to source leak current IGSS
—
—
Zero gate voltage drain current IDSS
—
—
Gate to source cutoff voltage VGS(off)
2.0
—
Static drain to source on state RDS(on)
—
3.8
resistance
Forward transfer admittance |yfs|
1.2 2.0
Input capacitance
Ciss
—
295
Output capacitance
Coss —
70
Reverse transfer capacitance Crss
—
12
Turn-on delay time
t d(on)
Rise time
tr
Turn-off delay time
t d(off)
Fall time
tf
Body to drain diode forward VDF
voltage
—
8
—
25
—
65
—
30
—
0.9
Body to drain diode reverse trr
recovery time
—
220
Note 1. Pulse Test
Max Unit
—
V
—
V
±10 µA
100 µA
3.0 V
5.0 Ω
—
S
—
pF
—
pF
—
pF
—
ns
—
ns
—
ns
—
ns
—
V
—
ns
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS =500 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 1A
VGS = 10 V*1
ID = 1A
VDS = 10 V*1
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 1A
VGS = 10 V
RL = 30Ω
IF =3 A, VGS = 0
IF = 3A, VGS = 0,
diF / dt = 100 A / µs
3