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Número de pieza
componentes Descripción
2SJ517 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
2SJ517
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
2SJ517 Datasheet PDF : 8 Pages
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2SJ517
Silicon P Channel MOS FET
High Speed Power Switching
Features
•
Low on-resistance
R
DS(on)
= 0.18
Ω
typ. (at V
GS
=–4V, I
D
=–1A)
•
Low drive current
•
High speed switching
•
2.5V gate drive devices.
Outline
UPAK
ADE-208-575B (Z)
3rd. Edition
Jun 1998
1
2
3
D
4
G
S
1. Gate
2. Drain
3. Source
4. Drain
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