Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1276 2SD1276A
DESCRIPTION
·With TO-220Fa package
·Complement to type 2SB950/950A
·High DC current gain
·High-speed switching
APPLICATIONS
·For power amplification
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
固IN电C半H导AN体GE SEMICONDUCTOR Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2SD1276
2SD1276A
Open emitter
2SD1276
VALUE
60
80
60
UNIT
V
VCEO
Collector-emitter voltage
Open base
V
2SD1276A
80
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current (DC)
4
A
ICM
Collector current-Peak
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
TC=25℃
Ta=25℃
8
A
40
W
2
150
℃
-55~150
℃