Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
Número de pieza
componentes Descripción
D1351 Ver la hoja de datos (PDF) - Inchange Semiconductor
Número de pieza
componentes Descripción
Fabricante
D1351
SILICON POWER TRANSISTOR
Inchange Semiconductor
D1351 Datasheet PDF : 3 Pages
1
2
3
Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
℃
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V
(BR)CEO
Collector-emitter breakdown voltage I
C
=50mA; I
B
=0
V
CEsat
Collector-emitter saturation voltage I
C
=2A; I
B
=0.2A
V
BE
Base-emitter on voltage
I
C
=0.5A ; V
CE
=5V
I
CBO
Collector cut-off current
V
CB
=60V; I
E
=0
I
EBO
Emitter cut-off current
V
EB
=7V; I
C
=0
h
FE
DC current gain
C
ob
Output capacitance
f
T
Transition frequency
Switching times
I
C
=0.5A ; V
CE
=5V
I
E
=0; V
CB
=10V,f=1MHz
I
C
=0.5A ; V
CE
=5V
t
on
Turn-on time
t
stg
Storage time
t
f
Fall time
I
B1
=-I
B2
=0.2A
V
CC
=30V;R
L
=15
Ω
Duty cycle
≤
1%
h
FE
Classifications
O
Y
GR
60-120 100-200 150-300
Product Specification
2SD1351
MIN TYP. MAX UNIT
60
V
0.25 1.0
V
0.7
1.0
V
0.1
mA
0.1
mA
60
300
35
pF
3.0
MHz
0.65
μ
s
1.30
μ
s
0.65
μ
s
2
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]