DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

2SC5858 Ver la hoja de datos (PDF) - Toshiba

Número de pieza
componentes Descripción
Fabricante
2SC5858 Datasheet PDF : 6 Pages
1 2 3 4 5 6
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Breakdown Voltage
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Storage Time
Switching Time
Fall Time
Storage Time
Fall Time
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
hFE (3)
VCE (sat)
VBE (sat)
fT
Cob
tstg(1)
tf(1)
tstg(2)
tf(2)
VCB = 1700 V, IE = 0
VEB = 5 V, IC = 0
IC = 10 mA, IB = 0
VCE = 5 V, IC = 2 A
VCE = 5 V, IC = 8 A
VCE = 5 V, IC = 17 A
IC = 17 A, IB = 4.25 A
IC = 17 A, IB = 4.25 A
VCE = 10 V, IC = 0.1 A
VCB = 10 V, IE = 0, f = 1 MHz
ICP = 9 A , IB1 (end) = 1.4 A
fH = 32 kHz
ICP = 8 A, IB1 (end) = 1.2 A
fH = 45 kHz
2SC5858
MIN TYP. MAX UNIT
1
mA
100
μA
750
V
30
60
11
19
5
7.5
1.5
V
1.0 1.5
V
2
MHz
280
pF
4.5
μs
0.1
3.5
μs
0.1
2
2006-11-22

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]