Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC5339
DESCRIPTION
·With TO-3P(H)IS package
·High voltage ,high speed
·Low saturation voltage
·Bult-in damper diode
APPLICATIONS
·Horizontal deflection output for medium
resolution display,color TV
·High speed switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
Fig.1 simplified outline (TO-3P(H)IS) and symbol
3
Emitter
固IN电C半H导AN体GE SEMICONDUTOR Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VALUE
1500
UNIT
V
VCEO
Collector-emitter voltage
Open base
600
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
7
A
ICM
Collector current-peak
14
A
IB
Base current
3.5
A
PC
Total power dissipation
Tj
Junction temperature
TC=25℃
50
W
150
℃
Tstg
Storage temperature
-55~150
℃