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Número de pieza
componentes Descripción
K8A50D Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
K8A50D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π -MOSⅦ)
Toshiba
K8A50D Datasheet PDF : 7 Pages
1
2
3
4
5
6
7
R
DS (ON)
– Tc
3.0
COMMON SOURCE
VGS
=
10 V
2.5
PULSE TEST
2.0
ID
=
8 A
1.5
4
1.0
2
0.5
0
−
80
−
40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
TK8A50D
I
DR
– V
DS
10
COMMON SOURCE
Tc
=
25°C
PULSE TEST
1
10
53
0.1
1
VGS
=
0,
−
1 V
0
−
0.2
−
0.4
−
0.6
−
0.8
−
1.0
−
1.2
DRAIN-SOURCE VOLTAGE V
DS
(V)
10000
1000
CAPACITANCE – V
DS
Ciss
100
Coss
10
COMMON SOURCE
VGS
=
0 V
f
=
1 MHz
Tc
=
25°C
1
0.1
1
Crss
10
100
DRAIN-SOURCE VOLTAGE V
DS
(V)
V
th
– Tc
5
4
3
www.DataSheet.net/
2
COMMON SOURCE
1
VDS
=
10 V
ID
=
1 mA
PULSE TEST
0
−
80
−
40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
P
D
– Tc
60
40
20
0
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
500
20
400
VDS
16
VDD
=
100 V
300
400
12
200
200
8
COMMON SOURCE
VGS
ID
=
8 A
Tc
=
25°C
100
PULSE TEST
4
0
0
0
5
10
15
20
25
30
TOTAL GATE CHARGE Q
g
(nC)
4
2008-09-16
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