Si3056
Si3018/19/10
Table 3. DC Characteristics, VD = 3.3 V
(VD = 3.0 to 3.6 V, TA = 0 to 70 °C)
Parameter
Symbol
Test Condition
Min
Typ
Max
High Level Input Voltage
VIH
2.4
—
—
Low Level Input Voltage
VIL
—
—
0.8
High Level Output Voltage
VOH
IO = –2 mA
2.4
—
—
Low Level Output Voltage
VOL
IO = 2 mA
—
—
0.35
Input Leakage Current
IL
–10
—
10
Power Supply Current, Digital1
ID
VD pin
—
15
—
Total Supply Current, Sleep Mode1
ID
PDN = 1, PDL = 0
—
9
—
Total Supply Current, Deep Sleep1,2
ID
PDN = 1, PDL = 1
—
1
—
Notes:
1. All inputs at 0.4 or VD – 0.4 (CMOS levels). All inputs are held static except clock and all outputs unloaded
(Static IOUT = 0 mA).
2. RGDT is not functional in this state.
Unit
V
V
V
V
µA
mA
mA
mA
Rev. 1.05
7