Description
The MOC223M consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector, in a surface mountable, small outline, plastic package. The MOCD223M is a dual channel version of the MOC223M. They are ideally suited for high density applications, and eliminates the need for through the board mounting.
Features
⢠High Current Transfer Ratio of 500% Minimum at IF = 1 mA
⢠Minimum BVCEO of 30 V Guaranteed
⢠Convenient Plastic SOIC-8 Surface Mountable Package Style, with 0.050" Lead Spacing
⢠Safety and Regulatory Approvals:
â UL1577, 2,500 VACRMS for 1 Minute
â DIN-EN/IEC60747-5-5, 565 V Peak Working Insulation Voltage
Applications
⢠Low Power Logic Circuits
⢠Interfacing and Coupling Systems of Different Potentials and Impedances
⢠Telecommunications Equipment
⢠Portable Electronics
⢠Solid State Relays
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