DESCRIPTION
These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for throughâtheâboard mounting.
FEATURES
⢠UL Recognized (File #E90700, Volume 2)
⢠VDE Recognized (File #13616) (add option âVâ for VDE approval, i.e., MOC215V-M)
⢠Convenient Plastic SOICâ8 Surface Mountable Package Style
⢠Low LED Input Current Required, for Easier Logic Interfacing
⢠Standard SOICâ8 Footprint, with 0.050â Lead Spacing
⢠Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
⢠High InputâOutput Isolation of 2500 Vac (rms) Guaranteed
APPLICATIONS
⢠Low power Logic Circuits
⢠Interfacing and coupling systems of different potentials and impedances
⢠Telecommunications equipment
⢠Portable electronics
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