Description
These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high-density applications, and eliminate the need for through-the-board mounting.
Features
⢠Closely Matched Current Transfer Ratios
⢠Minimum BVCEO of 70 V Guaranteed
â MOC205M, MOC206M, MOC207M
⢠Minimum BVCEO of 30 V Guaranteed
â MOC211M, MOC212M, MOC213M, MOC216M,
MOC217M
⢠Low LED Input Current Required for Easier Logic
Interfacing
â MOC216M, MOC217M
⢠Convenient Plastic SOIC-8 Surface Mountable
Package Style, with 0.050" Lead Spacing
⢠Safety and Regulatory Approvals:
â UL1577, 2,500 VACRMS for 1 Minute
â DIN-EN/IEC60747-5-5, 565 V Peak Working
Insulation Voltage
Applications
⢠Feedback Control Circuits
⢠Interfacing and Coupling Systems of Different
Potentials and Impedances
⢠General Purpose Switching Circuits
⢠Monitor and Detection Circuits
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