DESCRIPTION
These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through - the - board mounting.
FEATURES
⢠U.L. Recognized (File #E90700, Volume 2)
⢠VDE Recognized (File #136616) (add option "V" for VDE approval, i.e, MOC205V-M)
⢠Closely Matched Current Transfer Ratios
⢠Convenient Plastic SOIC-8 Surface Mountable Package Style
⢠Minimum BVCEOof 70 Volts Guaranteed
⢠Standard SOIC-8 Footprint, with 0.050" Lead Spacing
⢠Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
⢠High Input-Output Isolation of 2500 VAC(rms) Guaranteed
APPLICATIONS
⢠Feedback Control Circuits
⢠Interfacing and coupling systems of different potentials and impedances
⢠General Purpose Switching Circuits
⢠Monitor and Detection Circuits
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