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KP11N60D Hoja de datos

Número de pieza
componentes Descripción
Fabricante

This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies.

FEATURES
* VDSS=600V, ID=11A
* Drain-Source ON Resistance : RDS(ON)(Max)=0.38Ω@VGS=10V
* Qg(typ.)= 20nC

KP11N60D

KP11N60D


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