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componentes Descripción : TRANSZORB® Transient Voltage Suppressors

FEATURES
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 1500 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 %
• Excellent clamPing capability
• Very fast response time
• Low incremental surge resistance
• AEC-Q101 qualified
• Solder DIP 275 °C max. 10 s, per JESD 22-B106

componentes Descripción : TRANSZORB® Transient Voltage Suppressors

FEATURES
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 1500 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 %
• Excellent clamPing capability
• Very fast response time
• Low incremental surge resistance
• AEC-Q101 qualified
• Solder DIP 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive, and telecommunication.

componentes Descripción : SMD POWER INDUCTORS


FEATURES:
* SUPERIOR QUALITY FROM AN AUTOMATED PRODUCTION LINE.
* PICK AND PLACE COMPATIBLE.
* TAPE AND REEL PACKING.

APPLICATION:
* NOTEBOOK COMPUTERS
* DC-DC CONVERTERS.
* DC-AC INVERTERS.
* PDA.
* PC CAMERA.

componentes Descripción : .100"(2.54 mm) DIP Sockets

.100"(2.54 mm) DIP Sockets

• For DIPs with .100" (2.54 mm) lead spacing
Pin counts for 14-64 leads
• Lever actuated zero insertion force mechanism
• Socket easily disassembles for repairability
• Socket contact point of .110" (2.79 mm) below top surface of socket

Número de pieza(s) : V54C3256164VBUC
MOSEL
Mosel Vitelic, Corp
componentes Descripción : V54C3256164VBUC/T LOW POWER 256Mbit SDRAM 3.3 VOLT, 54-BALL SOC BGA 54-Pin TSOPII 16M X 16

Description

The V54C3256164VBUC/T is a low power four bank Synchronous DRAM organized as 4 banks x 4Mbit x 16. The V54C3256164VBUC/T achieves high speed data transfer rates up to 166 MHz by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock



Features

■ 4 banks x 4Mbit x 16 organization

■ High speed data transfer rates up to 166 MHz

■ Full Synchronous Dynamic RAM, with all signals referenced to clock rising edge

■ Single Pulsed RAS Interface

■ Data Mask for Read/Write Control

■ Four Banks controlled by BA0 & BA1

■ Programmable CAS Latency: 2, 3

■ Programmable Wrap Sequence: Sequential or Interleave

■ Programmable Burst Length:

   1, 2, 4, 8 for Sequential Type

   1, 2, 4, 8 for Interleave Type

■ Multiple Burst Read with Single Write Operation

■ Automatic and Controlled Precharge Command

■ Random Column Address every CLK (1-N Rule)

■ Power Down Mode

■ Auto Refresh and Self Refresh

■ Refresh Interval: 8192 cycles/64 ms

■ Available in 54-Ball SOC BGA/ 54-Pin TSOP II

■ LVTTL Interface

■ Single +3.3 V ±0.3 V Power Supply

■ Low Power Self Refresh Current

■ L-version 1.0mA

■ U-version 0.6mA


componentes Descripción : Low Capacitance TRANSZORB® Transient Voltage Suppressors

FEATURES

• Glass passivated chip junction

• 500 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 %

• Excellent clamPing capability

• Very fast response time

• Low incremental surge resistance

• Solder DIP 275 °C max. 10 s, per JESD 22-B106



TYPICAL APPLICATIONS

Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, and telecommunication.


componentes Descripción : TRANSZORB® Transient Voltage Suppressors

FEATURES
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 1500 W peak pulse power capability with a
   10/1000 µs waveform, repetitive rate (duty
   cycle): 0.01 %
• Excellent clamPing capability
• Very fast response time
• Low incremental surge resistance
• Solder DIP 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
   and WEEE 2002/96/EC

TYPICAL APPLICATIONS
   Use in sensitive electronics protection against voltage
   transients induced by inductive load switching
   and lighting on ICs, MOSFET, signal lines of sensor
   units for consumer, computer, industrial and
   telecommunication.

componentes Descripción : Glass Passivated Power Voltage-Regulating Diodes

FEATURES

• Plastic MELF package

• Ideal for automated placement

• Glass passivated chip junction

• Low Zener impedance

• Low regulation factor

• Solder DIP 260 °C, 40 s

• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC



TYPICAL APPLICATIONS

  For general purpose regulation and protection applications.



 


componentes Descripción : 5-Function Remote Controller / Package: 14-Pin DIP, 14-Pin SOIC, 16-Pin DIP and 16-Pin SOIC

The PTA977P (or 977W) and PT8A978P (or 978LW) provide a complete control functions to the remote controlled toy. The PT8A977P/977W has five input Pins corresponding with the five function buttons i.e, forward, backward, rightward, leftward and turbo.



The encoding circuit in the PT8A977P/977W sends digital codes to the two output Pins SO and SC. The digital codes correspond to the definite function buttons or their combinations. The SO and SC outputs are used in wireless and infra-red applications respectively.


componentes Descripción : V54C3256164VBUC/T LOW POWER 256Mbit SDRAM 3.3 VOLT, 54-BALL SOC BGA 54-Pin TSOPII 16M X 16

Description

The V54C3256164VBUC/T is a low power four bank Synchronous DRAM organized as 4 banks x 4Mbit x 16. The V54C3256164VBUC/T achieves high speed data transfer rates up to 166 MHz by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock



Features

■ 4 banks x 4Mbit x 16 organization

■ High speed data transfer rates up to 166 MHz

■ Full Synchronous Dynamic RAM, with all signals referenced to clock rising edge

■ Single Pulsed RAS Interface

■ Data Mask for Read/Write Control

■ Four Banks controlled by BA0 & BA1

■ Programmable CAS Latency: 2, 3

■ Programmable Wrap Sequence: Sequential or Interleave

■ Programmable Burst Length:

   1, 2, 4, 8 for Sequential Type

   1, 2, 4, 8 for Interleave Type

■ Multiple Burst Read with Single Write Operation

■ Automatic and Controlled Precharge Command

■ Random Column Address every CLK (1-N Rule)

■ Power Down Mode

■ Auto Refresh and Self Refresh

■ Refresh Interval: 8192 cycles/64 ms

■ Available in 54-Ball SOC BGA/ 54-Pin TSOP II

■ LVTTL Interface

■ Single +3.3 V ±0.3 V Power Supply

■ Low Power Self Refresh Current

■ L-version 1.0mA

■ U-version 0.6mA


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