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V40170C-M3 Hoja de datos

Número de piezacomponentes DescripciónFabricante
V40170C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay
Vishay Semiconductors Vishay
Other PDF  2013  
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V40170C-M3/4W image

FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS
    For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.

 

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