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Número de piezacomponentes DescripciónFabricante
K1010 N-Channel MOSFET Transistor Iscsemi
Inchange Semiconductor Iscsemi
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DESCRIPTION
·Drain Current –ID=6A@ TC=25℃
·Drain Source Voltage- : VDSS= 500V(Min)

APPLICATIONS
·Designed for high voltage, high speed power switching

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