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Número de piezacomponentes DescripciónFabricante
BUZ30AH N-Channel MOSFET Transistor Iscsemi
Inchange Semiconductor Iscsemi
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• DESCRITION
• High current,high speed switching

• FEATURES
• Static drain-source on-resistance: RDS(on) ≤130mΩ
• Enhancement mode
• Fast Switching Speed
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device performance and reliable operation

 

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