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BSH205G2 Hoja de datos

Número de piezacomponentes DescripciónFabricante
BSH205G2 20 V, P-channel Trench MOSFET NXP
NXP Semiconductors. NXP
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General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits
• Low threshold voltage
• Low on-state resistance
• Trench MOSFET technology
• Enhanced power dissipation capability of 890 mW
• AEC-Q101 qualified

Applications
• Relay driver
• High-speed line driver
• High-side loadswitch
• Switching circuits

 

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