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BSH205 Hoja de datos

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GENERAL DESCRIPTION
P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing.

FEATURES
• Very low threshold voltage
• Fast switching
• Logic level compatible
• Subminiature surface mount package

 

Número de pieza
componentes Descripción
PDF
Fabricante
P-channel enhancement mode MOS transistor
Ver
NXP Semiconductors.
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Siemens AG
P-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs
Ver
Unspecified

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