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BDW41 Hoja de datos

Número de piezacomponentes DescripciónFabricante
BDW41 Silicon NPN Darlington Power Transistor NJSEMI
New Jersey Semiconductor NJSEMI
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DESCRIPTION
• Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min)
• High DC Current Gain : hFE= 1000(Min) @IC= 5A
• Low Collector Saturation Voltage : VCE(sat)= 2.0V(Max.)@ IC= 5.0A = 3.0V(Max.)@ IC= 10A
• Complement to Type BDW46

APPLICATIONS
• Designed for general purpose and low speed switching applications

 

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