Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits
Casa >>>ST-Microelectronics >>> AM80610-030 Hoja de datos

AM80610-030 Hoja de datos

Número de pieza
componentes Descripción
Fabricante
Other PDF
  not available.
PDF
DOWNLOAD     
AM80610-030 image

DESCRIPTION
The AM80610-030 is a high power, common base NPN silicon bipolar device optimized for CW operation in the 620 - 960 MHz frequency range.
AM80610-030 utilizes a rugged, overlay, emitter ballasted L-Band die geometry to achieve high gain and collector efficiency and is suitable for driver or output stage use in Class C power amplifiers. Typical applications include military communications, ECM, and test equipment.
The AM80610-030 is provided in the industry standard, metal/ceramic AMPAC hermetic package.

■ REFRACTORY/GOLD METALLIZATION
■ EMITTER SITE BALLASTED
■ INPUT/OUTPUT MATCHING
■ METAL/CERAMIC HERMETIC PACKAGE
■ POUT = 30 W MIN. WITH 8.5 dB GAIN

 

Número de pieza
componentes Descripción
PDF
Fabricante
RF & MICROWAVE TRANSISTORS UHF COMMUNICATIONS APPLICATIONS
Ver
Advanced Power Technology
RF & MICROWAVE TRANSISTORS UHF COMMUNICATIONS APPLICATIONS
Ver
Advanced Power Technology
RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS
Ver
Advanced Power Technology
RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS
Ver
Advanced Power Technology
RF & MICROWAVE TRANSISTORS UHF TVLINEAR APPLICATIONS
Ver
Advanced Power Technology
RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS
Ver
Advanced Power Technology
RF AND MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS
Ver
Advanced Power Technology
RF AND MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS
Ver
Advanced Power Technology
RF AND MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS
Ver
Advanced Power Technology
RF AND MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS
Ver
Advanced Power Technology

Share Link: 

All Rights Reserved© datasheetq.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]