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2SJ201 Hoja de datos

Número de piezacomponentes DescripciónFabricante
2SJ201 Silicon P Channel MOS Type Field Effect Transistor Toshiba
Toshiba Toshiba
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High-Power Amplifier Application

High breakdown voltage  : VDSS= −200 V
High forward transfer admittance  : |Yfs| = 5.0 S (typ.)
Complementary to 2SK1530

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