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Número de piezacomponentes DescripciónFabricante
2SC5408-T1 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION NEC
NEC => Renesas Technology NEC
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FEATURE
• High fT
    17 GHz TYP.
• High gain
    |S21e|2 = 15.5 dB TYP.
    @f = 2 GHz, VCE = 2 V, IC = 7 mA
• NF = 1.1 dB, @f = 2 GHz VCE = 2 V, IC = 1 mA
• 6-pin Small Mini Mold Package

 

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